Datasheet NTE112 - NTE Electronics SCHOTTKY RECTIFIER, 30 mA, 5 V, DO-35 — 数据表
Part Number: NTE112
详细说明
Manufacturer: NTE Electronics
Description: SCHOTTKY RECTIFIER, 30 mA, 5 V, DO-35
Docket:
NTE112 Silicon Small Signal Schottky Diode
Description: The NTE112 is a metal to silicon junction diode in a DO35 type package primarly intended for UHF mixers and ultrafast switching applications.
Absolute Maximum Ratings: Repetitive Peak Reverse Voltage, VRRM .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Forward Continuous Current (TA = +25°C, Note 1), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Surge Non-Repetitive Forward Current (tp 1s, Note 1), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 ° to +150°C Thermal Resistance, Junction-to-Ambient (Note 1), Rth (j- a) . . . . . . . . . . . . . . . . . . . . . . . . 400°C/W Maximum Lead
Specifications:
- Diode Type: Schottky
- Forward Current If(AV): 30 mA
- Forward Surge Current Ifsm Max: 60 mA
- Forward Voltage VF Max: 0.55 V
- Number of Pins: 2
- Package / Case: DO-35
- Repetitive Reverse Voltage Vrrm Max: 5 V
Accessories:
- MULTICORE (SOLDER) - MM02104
- SPC Technology - 3613