Datasheet NTE584 - NTE Electronics SCHOTTKY RECTIFIER, 35 mA, 20 V DO-35 — 数据表

详细说明

Manufacturer: NTE Electronics

Description: SCHOTTKY RECTIFIER, 35 mA, 20 V DO-35

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Docket:
NTE584 Silicon Schottky Diode
Description: The NTE584 is a metal to silicon junction diode in a DO35 type package featuring high breakdown, low turn­on voltage and ultrafast switching primarily intended for high level UHF/VHF detection and pulse application with broad dynamic range.

Absolute Maximum Ratings: (Limiting Values) Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Forward Continuous Current (TA = +25°C, Note 1), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35mA Surge Non­Repetitive Forward Current (tp 1s, Note 1), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­65° to +200°C Maximum Lead Temperature (During Soldering

Specifications:

• Diode Type: Schottky
• Forward Current If(AV): 35 mA
• Forward Surge Current Ifsm Max: 100 mA
• Forward Voltage VF Max: 1 V
• Repetitive Reverse Voltage Vrrm Max: 20 V

RoHS: Yes