Datasheet ON Semiconductor MBR2030CTLG — 数据表

MBR2030CTLG
Switch-mode
Dual Schottky
Power Rectifier
Features and Benefits •
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• www.onsemi.com Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop (0.4 Max @ 10 A, TC = 150°C)
High Junction Temperature
High dv/dt Capability
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
20 A Total (10 A Per Diode Leg)
This Device is Pb−Free and is RoHS Compliant* SCHOTTKY BARRIER …