Datasheet MBR3100G - ON Semiconductor DIODE, SCHOTTKY, 3 A, DO-201AD — 数据表

详细说明

Manufacturer: ON Semiconductor

Description: DIODE, SCHOTTKY, 3 A, DO-201AD

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Docket:
MBR3100
Preferred Device
Axial Lead Rectifier
This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode.

State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
Features

Simulation Model

Specifications:

• Breakdown Voltage Max: 100 V
• Current Ifsm: 150 A
• Current Ir Max: 600 µA
• Diode Type: Schottky
• Forward Current If(AV): 3 A
• Forward Surge Current Ifsm Max: 150 A
• Forward Voltage VF Max: 790 mV
• Forward Voltage: 790 mV
• Junction Temperature Tj Max: 175°C
• Mounting Type: Axial Leaded
• Number of Pins: 2
• Package / Case: DO-201AD
• Repetitive Reverse Voltage Vrrm Max: 100 V
• SVHC: No SVHC (15-Dec-2010)

RoHS: Yes