Datasheet ON Semiconductor MBRS130LT3G — 数据表

Schottky Power Rectifier
Surface Mount Power Package MBRS130LT3G,
SBRS8130LT3G,
SBRS8130LN
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification,
or as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the
system. www.onsemi.com SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
30 VOLTS Features •
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• Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, TJ = 25°C)
Small Compact Surface Mountable Package with J−Bend Leads
Highly Stable Oxide Passivated Junction
Guard−Ring for Stress Protection …