Datasheet ON Semiconductor MBD301G — 数据表

MBD301G,
MMBD301LT1G,
MMBD301LT3G,
SMMBD301LT3G
Silicon Hot-Carrier Diodes www.onsemi.com Schottky Barrier Diodes
These devices are designed primarily for high−efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package. 30 VOLTS
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES Features •
•
•
•
• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V
Low Reverse Leakage − IR = 13 nAdc (Typ) MBD301, MMBD301
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable …