Datasheet 1N6263 - STMicroelectronics DIODE, RF, SCHOTTKY — 数据表

详细说明

Manufacturer: STMicroelectronics

Description: DIODE, RF, SCHOTTKY

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Docket:
®
1N6263
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching.

Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range.
DO-35

Specifications:

• Alternate Case Style: SOD-27
• Breakdown Voltage Vbr: 60 V
• Capacitance Ct: 2.2 pF
• Current Ir Max: 10 µA
• Diode Type: Schottky
• External Diameter: 1.85 mm
• External Length / Height: 4.06 mm
• Forward Current If Max: 15 mA
• Forward Current If(AV): 15 mA
• Forward Surge Current Ifsm Max: 50 mA
• Forward Voltage VF Max: 410 V
• Forward Voltage: 410 mV
• Mounting Type: Axial Leaded
• Number of Pins: 2
• Package / Case: DO-35
• Power Dissipation Max: 400 mW
• Repetitive Reverse Voltage Vrrm Max: 60 V
• SVHC: No SVHC (15-Dec-2010)
• Thermal Capacitance Ct: 2.2 pF

RoHS: Yes

Accessories:

• Electrolube - SMA10SL