Datasheet 1N6376G - ON Semiconductor DIODE, TVS — 数据表

ON Semiconductor 1N6376G

Part Number: 1N6376G

详细说明

Manufacturer: ON Semiconductor

Description: DIODE, TVS

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Docket:
1N6373 - 1N6381 Series (ICTE-5 - ICTE-36) 1500 Watt Peak Power Mosorbt Zener Transient Voltage Suppressors
Unidirectional*
Mosorb devices are designed to protect voltage sensitive components from high voltage, high-energy transients.

They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ON Semiconductor's exclusive, costeffective, highly reliable Surmetict axial leaded package and are ideallysuited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect CMOS, MOS and Bipolar integrated circuits.
Specification Features http://onsemi.com
Cathode Anode

Specifications:

  • Mounting Type: Axial Leaded
  • Number of Pins: 2
  • Operating Temperature Range: -65°C to +175°C
  • Package / Case: 457
  • Power Dissipation Max: 5 W
  • SVHC: No SVHC (15-Dec-2010)
  • Test Current: 1 mA
  • Zener Voltage Vz Typ: 12 V

RoHS: Yes