Datasheet SI2366DS-T1-GE3 - Vishay MOSFET, N CH, W/D, 30 V, 5.8 A, SOT23 — 数据表

Vishay SI2366DS-T1-GE3

Part Number: SI2366DS-T1-GE3

详细说明

Manufacturer: Vishay

Description: MOSFET, N CH, W/D, 30 V, 5.8 A, SOT23

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Docket:
New Product
Si2366DS
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

  • Continuous Drain Current Id: 5.8 A
  • Drain Source Voltage Vds: 30 V
  • Number of Pins: 3
  • On Resistance Rds(on): 0.03 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation: 2.1 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: SOT-23
  • Transistor Polarity: N Channel

RoHS: Yes

其他名称:

SI2366DST1GE3, SI2366DS T1 GE3