Datasheet SIR316DP-T1-GE3 - Vishay MOSFET, N CH, DIO, 25 V, 30 A, PPK SO8 — 数据表

详细说明

Manufacturer: Vishay

Description: MOSFET, N CH, DIO, 25 V, 30 A, PPK SO8

Download Data Sheet

Docket:
New Product
SiR316DP
Vishay Siliconix
N-Channel 25 V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

• Continuous Drain Current Id: 30 A
• Drain Source Voltage Vds: 25 V
• Number of Pins: 8
• On Resistance Rds(on): 0.0054 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 25 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel

RoHS: Yes

其他名称:

SIR316DPT1GE3, SIR316DP T1 GE3