Datasheet SIR802DP-T1-GE3 - Vishay MOSFET, N CH, DIO, 20 V, 30 A, PPK SO8 — 数据表

详细说明

Manufacturer: Vishay

Description: MOSFET, N CH, DIO, 20 V, 30 A, PPK SO8

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Docket:
New Product
SiR802DP
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

• Continuous Drain Current Id: 30 A
• Drain Source Voltage Vds: 20 V
• Number of Pins: 8
• On Resistance Rds(on): 0.0041 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 27.7 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel

RoHS: Yes

其他名称:

SIR802DPT1GE3, SIR802DP T1 GE3