Datasheet SIR808DP-T1-GE3 - Vishay MOSFET, N CH, DIO, 25 V, 20 A, PPK SO8 — 数据表

详细说明

Manufacturer: Vishay

Description: MOSFET, N CH, DIO, 25 V, 20 A, PPK SO8

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Docket:
SiR808DP
Vishay Siliconix
N-Channel 25 V (D-S) MOSFET
FEATURES
ID (A)a, g 20 20 Qg (Typ.) 7.5 nC

Specifications:

• Continuous Drain Current Id: 20 A
• Drain Source Voltage Vds: 25 V
• Number of Pins: 8
• On Resistance Rds(on): 0.0074 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 29.8 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel

RoHS: Yes

其他名称:

SIR808DPT1GE3, SIR808DP T1 GE3