Datasheet SI4650DY-T1-GE3 - Vishay MOSFET, NN CH, SCH DIODE, 30 V, SO8 — 数据表
Part Number: SI4650DY-T1-GE3
详细说明
Manufacturer: Vishay
Description: MOSFET, NN CH, SCH DIODE, 30 V, SO8
Docket:
Si4650DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V) Channel-1 Channel-2 30 30 RDS(on) () 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0 8.0 8.0 8.0 10.5 10.5
Specifications:
- Continuous Drain Current Id: 8 A
- Drain Source Voltage Vds: 30 V
- Module Configuration: Dual
- Number of Pins: 8
- On Resistance Rds(on): 0.014 Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation: 3.1 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: SOIC
- Transistor Polarity: N Channel
RoHS: Yes
其他名称:
SI4650DYT1GE3, SI4650DY T1 GE3