Datasheet SIZ900DT-T1-GE3 - Vishay MOSFET, NN CH, 30 V, PPAIR 6X5 — 数据表
Part Number: SIZ900DT-T1-GE3
详细说明
Manufacturer: Vishay
Description: MOSFET, NN CH, 30 V, PPAIR 6X5
Docket:
New Product
SiZ900DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
FEATURES PRODUCT SUMMARY
Specifications:
- Continuous Drain Current Id: 24 A
- Drain Source Voltage Vds: 30 V
- Module Configuration: Dual
- Number of Pins: 8
- On Resistance Rds(on): 0.0059 Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation: 48 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: PowerPAIR
- Transistor Polarity: N Channel
RoHS: Yes
其他名称:
SIZ900DTT1GE3, SIZ900DT T1 GE3