Datasheet DMS3016SSSA - Diodes MOSFET, N CH, W DIODE, 30 V, 9.8 A, SO8 — 数据表
Part Number: DMS3016SSSA
详细说明
Manufacturer: Diodes
Description: MOSFET, N CH, W DIODE, 30 V, 9.8 A, SO8
Download Data SheetDocket:
DMS3016SSSA
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Features
· DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: · Low RDS(ON) - minimizes conduction losses · Ultra Low VSD enhanced to reduce losses due to body diode conduction · Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses · Low gate capacitance (Qg/Qgs) ratio reduces risk of shootthrough or cross conduction currents at high frequencies · Avalanche rugged IAR and EAR rated Lead Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Specifications:
- Continuous Drain Current Id: 9.8 A
- Drain Source Voltage Vds: 30 V
- Number of Pins: 8
- On Resistance Rds(on): 0.009 Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation: 1.54 W
- Rds(on) Test Voltage Vgs: 10 V
- SVHC: No SVHC (20-Jun-2011)
- Transistor Case Style: SOIC
- Transistor Polarity: N Channel
RoHS: Yes