Datasheet PMDT290UCE - NXP MOSFET, N/P CH, 20/20 V, 800/550 mA, SOT666 — 数据表

详细说明

Manufacturer: NXP

Description: MOSFET, N/P CH, 20/20 V, 800/550 mA, SOT666

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Docket:
SO T6
PMDT290UCE
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
Rev.

1 -- 6 October 2011 Product data sheet
1. Product profile

Specifications:

• Continuous Drain Current Id: 800 mA
• Drain Source Voltage Vds: 20 V
• Number of Pins: 6
• On Resistance Rds(on): 0.29 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 330 mW
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 750 mV
• Transistor Case Style: SOT-666
• Transistor Polarity: N and P Complement

RoHS: Yes