Datasheet PMDT670UPE - NXP MOSFET, P CH, DUAL, 20 V, 550 mA, SOT666 — 数据表

详细说明

Manufacturer: NXP

Description: MOSFET, P CH, DUAL, 20 V, 550 mA, SOT666

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Docket:
SO T6
PMDT670UPE
20 V, 550 mA dual P-channel Trench MOSFET
Rev.

1 -- 13 September 2011 Product data sheet
1. Product profile

Specifications:

• Continuous Drain Current Id: -550 mA
• Drain Source Voltage Vds: -20 V
• Number of Pins: 6
• On Resistance Rds(on): 0.67 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 500 mW
• Rds(on) Test Voltage Vgs: -4.5 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: -800 mV
• Transistor Case Style: SOT-666
• Transistor Polarity: Dual P Channel

RoHS: Yes