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NPN general purpose double transistor 65 V, 100 mA, SOT363
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DISCRETE SEMICONDUCTORS DATA SHEET
handbook, halfpage MBD128 BC846S
NPN general purpose double
transistor
Product data sheet
Supersedes data of 1999 May 28 1999 Sep 01 NXP Semiconductors Product data sheet NPN general purpose double transistor BC846S FEATURES
• Two transistors in one package
• Reduces number of components and board space
handbook, halfpage • No mutual interference between the transistors. 6 6
5 5 4 4
TR2 APPLICATIONS TR1 • General purpose switching and small signal
amplification. 1 2 3
1 Top view 2 3 MAM340 DESCRIPTION
NPN double transistor in an SC-88 (SOT363) plastic six
lead package. Fig.1 Simplified outline (SC-88) and symbol. PINNING
PIN DESCRIPTION 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 MARKING
TYPE NUMBER MARKING CODE BC846S 4Ft LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor
VCBO collector-base voltage open emitter − 80 V VCEO collector-emitter voltage open base − 65 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 100 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C − 300 mW Tamb ≤ 25 °C Per device
Ptot total power dissipation Tamb ≤ 25 °C; note 1 Note
1. Refer to SC-88 (SOT363) standard mounting conditions. 1999 Sep 01 2 NXP Semiconductors Product data sheet NPN general purpose double transistor BC846S THERMAL CHARACTERISTICS
SYMBOL …
