Datasheet NTLJD3119CTAG - ON Semiconductor MOSFET, NP, 20 V, 6 LEAD DFN — 数据表

详细说明

Manufacturer: ON Semiconductor

Description: MOSFET, NP, 20 V, 6 LEAD DFN

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Docket:
NTLJD3119C Power MOSFET
Features
20 V/-20 V, 4.6 A/-4.1 A, mCoolt Complementary, 2x2 mm, WDFN Package
· Complementary N-Channel and P-Channel MOSFET · WDFN Package with Exposed Drain Pad for Excellent Thermal · · · · ·
Conduction Footprint Same as SC-88 Package Leading Edge Trench Technology for Low On Resistance 1.8 V Gate Threshold Voltage Low Profile (< 0.8 mm) for Easy Fit in Thin Environments This is a Pb-Free Device

Specifications:

• Continuous Drain Current Id: 4.6 A
• Current Id Max: 3.8 A
• Drain Source Voltage Vds: 20 V
• Mounting Type: SMD
• Number of Pins: 6
• On Resistance Rds(on): 65 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: DFN
• Power Dissipation: 2.3 W
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 700 mV
• Transistor Case Style: DFN
• Transistor Polarity: N and P Channel
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 700 mV
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes