Datasheet NTE312 - NTE Electronics N CHANNEL JFET, -30 V, TO-92 — 数据表

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Manufacturer: NTE Electronics

Description: N CHANNEL JFET, -30 V, TO-92

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Docket:
NTE312
N­Channel Silicon Junction Field Effect Transistor
Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications.

The NTE312 comes in a TO­92 package. Features: D High Power Gain: 10dB Min at 400MHz D High Transconductance: 4000 µmho Min at 400MHz D Low Crss: 1pF Max D High (Yfs) / Ciss Ratio (High­Frequency Figure­of­Merit) D Drain and Gate Leads Separated for High Maximum Stable Gain D Cross­Modulation Minimized by Square­Law Transfer Characteristic D For Use in VHF Amplifiers in FM, TV, and Mobile Communications Equipment Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain­Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate­Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­30V Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . .

Specifications:

• Breakdown Voltage Vbr: -30 V
• Current Rating: 15 mA
• Gate-Source Breakdown Voltage: -50 V
• Gate-Source Cutoff Voltage Vgs(off) Max: -6 V
• Number of Pins: 3
• Power Dissipation: 250 mW
• Transistor Type: JFET

RoHS: Yes