Datasheet FDD86102LZ - Fairchild MOSFET, N CH, 100 V, 35 A, TO-252 — 数据表

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Manufacturer: Fairchild

Description: MOSFET, N CH, 100 V, 35 A, TO-252

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Docket:
FDD86102LZ N-Channel PowerTrench® MOSFET
FDD86102LZ
N-Channel PowerTrench® MOSFET
100 V, 35 A, 22.5 m Features
Max rDS(on) = 22.5 m at VGS = 10 V, ID = 8 A Max rDS(on) = 31 m at VGS = 4.5 V, ID = 7 A HBM ESD protection level > 6 kV typical (Note 4) Very low Qg and Qgd compared to competing trench technologies Fast switching speed 100% UIL tested RoHS Compliant

Specifications:

• Continuous Drain Current Id: 42 A
• Drain Source Voltage Vds: 100 V
• MSL: MSL 1 - Unlimited
• Number of Pins: 3
• On Resistance Rds(on): 0.0178 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 54 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Case Style: TO-252
• Transistor Polarity: N Channel

RoHS: Yes