Datasheet SIRA04DP-T1-GE3 - Vishay MOSFET, 30 V, 40 A, PPAKSO-8 — 数据表
Part Number: SIRA04DP-T1-GE3
详细说明
Manufacturer: Vishay
Description: MOSFET, 30 V, 40 A, PPAKSO-8
Docket:
New Product
SiRA04DP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
Specifications:
- Continuous Drain Current Id: 40 A
- Drain Source Voltage Vds: 30 V
- MSL: MSL 1 - Unlimited
- Number of Pins: 8
- On Resistance Rds(on): 0.0018 Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation: 27.7 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: PowerPAK SO
- Transistor Polarity: N Channel
- Voltage Vgs Max: 30 V
- RoHS: Yes
其他名称:
SIRA04DPT1GE3, SIRA04DP T1 GE3