Datasheet BSP125 L6327 - Infineon MOSFET, N-CH, 600 V, 120 mA, SOT-223 — 数据表

详细说明

Manufacturer: Infineon

Description: MOSFET, N-CH, 600 V, 120 mA, SOT-223

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Docket:
Rev.

2.1
BSP125
SIPMOS Power-Transistor
Feature · N-Channel · Enhancement mode · Logic Level · dv/dt rated
Product Summary VDS RDS(on) ID 600 45 0.12

Specifications:

• Continuous Drain Current Id: 120 mA
• Drain Source Voltage Vds: 600 V
• MSL: MSL 1 - Unlimited
• Number of Pins: 4
• On Resistance Rds(on): 25 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 1.8 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 1.9 V
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel
• RoHS: Yes