Datasheet BSP129 L6327 - Infineon MOSFET, N-CH, 240 V, 350 mA, SOT-223 — 数据表
Part Number: BSP129 L6327
详细说明
Manufacturer: Infineon
Description: MOSFET, N-CH, 240 V, 350 mA, SOT-223
Docket:
BSP129
SIPMOS® Small-Signal-Transistor
Features · N-channel · Depletion mode · dv /dt rated · Available with V GS(th) indicator on reel · Pb-free lead plating; RoHS compliant · Qualified according to AEC Q101
Product Summary VDS RDS(on),max IDSS,min 240 6 0.05 V W A
PG-SOT223
Specifications:
- Continuous Drain Current Id: 350 mA
- Drain Source Voltage Vds: 240 V
- MSL: MSL 1 - Unlimited
- Number of Pins: 4
- On Resistance Rds(on): 4.2 Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation: 1.8 W
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: -1.4 V
- Transistor Case Style: SOT-223
- Transistor Polarity: N Channel
- RoHS: Yes