Datasheet BSS126 H6327 - Infineon MOSFET, N-CH, 600 V, 21 mA, SOT23 — 数据表

详细说明

Manufacturer: Infineon

Description: MOSFET, N-CH, 600 V, 21 mA, SOT23

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Docket:
BSS126
SIPMOS® Small-Signal-Transistor
Features · N-channel · Depletion mode · dv /dt rated · Available with VGS(th) indicator on reel · Pb-free lead plating; RoHS compliant · Qualified according to AEC Q101 · Halogen-free according to IEC61249-2-21
Product Summary VDS RDS(on),max IDSS,min 600 700 V
0.007 A PG-SOT-23

Specifications:

• Continuous Drain Current Id: 21 mA
• Drain Source Voltage Vds: 600 V
• MSL: MSL 1 - Unlimited
• Number of Pins: 3
• On Resistance Rds(on): 280 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 500 mW
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: -2 V
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• RoHS: Yes