Datasheet IPB025N10N3 G - Infineon MOSFET, N-CH, 100 V, 180 A, TO263-7 — 数据表

详细说明

Manufacturer: Infineon

Description: MOSFET, N-CH, 100 V, 180 A, TO263-7

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Docket:
IPB025N10N3 G
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TM

Specifications:

• Continuous Drain Current Id: 180 A
• Drain Source Voltage Vds: 100 V
• MSL: MSL 1 - Unlimited
• Number of Pins: 7
• On Resistance Rds(on): 0.002 Ohm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation: 300 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 2.7 V
• Transistor Case Style: TO-263
• Transistor Polarity: N Channel
• RoHS: Yes