Datasheet SPB11N60C3 - Infineon MOSFET, N-CH, 650 V, 11 A, D2PAK — 数据表

详细说明

Manufacturer: Infineon

Description: MOSFET, N-CH, 650 V, 11 A, D2PAK

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Docket:
SPB11N60C3 Cool MOSTM Power Transistor
Feature · New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · High peak current capability · Improved transconductance
VDS @ Tjmax RDS(on) ID
650 0.38 11
PG-TO263

Specifications:

• Continuous Drain Current Id: 11 A
• Drain Source Voltage Vds: 650 V
• MSL: MSL 1 - Unlimited
• Number of Pins: 3
• On Resistance Rds(on): 0.34 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 125 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: TO-263
• Transistor Polarity: N Channel
• RoHS: Yes