Datasheet NTE2903 - NTE Electronics MOSFET, N CH, 500 V, 5 A, TO-220FN-3 — 数据表
Part Number: NTE2903
详细说明
Manufacturer: NTE Electronics
Description: MOSFET, N CH, 500 V, 5 A, TO-220FN-3
Docket:
NTE2903 MOSFET N-Ch, Enhancement Mode High Speed Switch
Features: D Low Drain-Source ON Resistance: RDS(ON) = 1.35 Typ D High Forward Transfer Admittance: |yfs| = 3.5S Typ D Low Leakage Current: IDSS = 100A (VDS = 500V) D Enhancement Mode: Vth = 2.0 to 4.0V (VDS = 10V, ID = 1mA) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain-Source Voltage, VDSS .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Drain-Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Gate-Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V Drain Current (Note 2), ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Pulsed (t = 1ms) . . . . . . . . . . . . . . . . . . . . . .
Specifications:
- Continuous Drain Current Id: 5 A
- Drain Source Voltage Vds: 500 V
- Number of Pins: 3
- On Resistance Rds(on): 1.35 Ohm
- Power Dissipation: 35 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Polarity: N Channel
- RoHS: Yes