Datasheet BUK762R0-40E - NXP MOSFET, N-CH, 40 V, 120 A, D2PAK — 数据表
Part Number: BUK762R0-40E
详细说明
Manufacturer: NXP
Description: MOSFET, N-CH, 40 V, 120 A, D2PAK
Docket:
BUK762R0-40E
13 July 2012
N-channel TrenchMOS standard level FET
Product data sheet
1.
Product profile
Specifications:
- Continuous Drain Current Id: 120 A
- Drain Source Voltage Vds: 40 V
- Number of Pins: 3
- On Resistance Rds(on): 1650µ Ohm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation: 293 W
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 3 V
- Transistor Case Style: TO-263
- Transistor Polarity: N Channel
- RoHS: Y-Ex
- SVHC: No SVHC (18-Jun-2012)
其他名称:
BUK762R040E, BUK762R0 40E