Datasheet FCPF190N60 - Fairchild MOSFET, N-CH, 600 V, 20.2 A, TO-220F — 数据表

详细说明

Manufacturer: Fairchild

Description: MOSFET, N-CH, 600 V, 20.2 A, TO-220F

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Docket:
FCP190N60 / FCPF190N60 N-Channel MOSFET
March 2012
SuperFET® II FCP190N60 / FCPF190N60
600V N-Channel MOSFET Features
· 650V @TJ = 150°C · Max.

RDS(on) = 199m · Ultra low gate charge (typ. Qg = 57nC) · Low effective output capacitance (typ. Coss.eff = 160pF) · 100% avalanche tested

Specifications:

• Continuous Drain Current Id: 20.2 A
• Drain Source Voltage Vds: 600 V
• Number of Pins: 3
• On Resistance Rds(on): 0.17 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 39 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: TO-220F
• Transistor Polarity: N Channel
• RoHS: Yes
• SVHC: No SVHC (18-Jun-2012)