Datasheet NXP PDTD114ETVL — 数据表

SO T2 3 PDTD1xxxT series
500 mA, 50 V NPN resistor-equipped transistors
Rev. 1 -- 15 May 2014 Product data sheet 1. Product profile
1.1 General description
NPN Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview Package NXP PDTD143ET PDTD143XT PDTD114ET SOT23 JEITA JEDEC PNP complement Package configuration small Type number TO-236AB PDTB143ET PDTB143XT PDTB114ET 1.2 Features 500 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count 10 % resistor ratio tolerance AEC-Q101 qualified High temperature applications up to 175 °C 1.3 Applications IC inputs control Cost-saving alternative to BC807 or BC817 series transistors in digital applications Switching loads NXP Semiconductors PDTD1xxxT series
500 mA, 50 V NPN resistor-equipped transistors 1.4 Quick reference data
Table 2. Symbol VCEO IO R1 Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input) PDTD143ET PDTD143XT PDTD114ET R2 bias resistor 2 (base-emitter) PDTD143ET PDTD143XT PDTD114ET 4.7 10 10 k k k 4.7 4.7 10 k k k Conditions open base Min Typ Max 50 500 Unit V mA 2. Pinning information
Table 3. Pin 1 2 3 Pinning Description input (base) GND (emitter) output (collector)
1 1
R2 R1 Simplified outline Graphic symbol
3 2
sym007 3. Ordering information
Table 4. Ordering information Package Name PDTD1xxxT series TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 Type number PDTD1XXXT_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 1 -- 15 May 2014 2 of 18 NXP Semiconductors PDTD1xxxT series
500 mA, 50 V NPN resistor-equipped transistors 4. Marking
Table 5. Marking codes Marking code[1] *4Z *5Z *10 Type number PDTD143ET PDTD143XT PDTD114ET
[1] * = placeholder for manufacturing site code 5. Limiting values
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO Parameter collector-base voltage collector-emitter voltage emitter-base voltage PDTD143ET PDTD143XT PDTD114ET VI input voltage PDTD143ET PDTD143XT PDTD114ET IO Ptot Tj Tamb Tstg
[1] [2] Conditions open emitter open base open collector Min 10 7 10 - Max 50 50 10 7 10 +30 +30 +50 500 320 460 175 +175 +175 Unit V V V V V V V V mA mW mW C C C output current total power dissipation junction temperature ambient temperature storage temperature Tamb 25 C
[1] [2] 55 55 Device mounted on an FR4 Prin …