Datasheet Vishay SI8410DB-T2-E1 — 数据表

Si8410DB
www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () MAX. 0.037 at VGS = 4.5 V 20 0.041 at VGS = 2.5 V 0.047 at VGS = 1.8 V 0.068 at VGS = 1.5 V ID (A) a 5.7 5.4 5.0 4.2 5.9 nC Qg (TYP.) FEATURES TrenchFET® power MOSFET Ultra small 1 mm x 1 mm maximum outline Ultra-thin 0.54 mm maximum height Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MICRO FOOT® 1 x 1 0 841xx x
m 1m Backside View
1 D 3 D 2 APPLICATIONS Load switch Power management High speed switching
1 G D Marking Code: 8410 Ordering Information: Si8410DB-T2-E1 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage TA = 25 °C Continuous Drain Current (TJ = 150 °C) TA = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 100 s) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TA = 25 °C Maximum Power Dissipation TA = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Package Reflow Conditions e VPR IR/Convection TJ, Tstg PD IDM IS ID SYMBOL VDS VGS LIMIT 20 ±8 5.7 a 4.5 a 3.8 c 3.0 c 20 1.5 a 0.65 c 1.8 a 1.1 a 0.78 c 0.5 c -55 to 150 260 260 W A UNIT V THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient a, b Maximum Junction-to-Ambient c, d t = 10 s t = 10 s SYMBOL RthJA TYPICAL 55 125 MAXIMUM 70 160 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s, TA = 25 °C. b. Maximum under steady state conditions is 100 °C/W. c. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s. d. Maximum under steady state conditions is 190 °C/W. e. Refer to IPC/JEDEC® (J-STD-020), no manual or hand soldering. f. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. S14-1067-Rev. A, 19-May-14 Document Number: 62961 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1 m m 4 S Bump Side View G S N-Channel MOSFET °C Si8410DB
www.vishay.com Vishay Siliconix
SYMBOL VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) TEST CONDITIONS VGS = 0 V, ID = 250 A ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = ± 8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70 °C VDS -5 V, VGS = 4.5 V VGS = 4.5 V, ID = 1.5 A VGS = 2.5 V, ID = 1 A VGS = 1.8 V, ID = 1 A VGS = 1.5 V, ID = 0.5 A VDS = 10 V, ID = 1.5 A MIN. 20 0.4 10 VDS …