Datasheet Fairchild MMBT3906 — 数据表
制造商 | Fairchild |
系列 | MMBT3906 |
零件号 | MMBT3906 |
PNP通用放大器
数据表
PNP General-Purpose Amplifier
2N3906 / MMBT3906 / PZT3906
PNP General-Purpose Amplifier
Description
This device is designed for general-purpose amplifier
and switching applications at collector currents of 10 mA
to 100 mA. 2N3906 PZT3906 MMBT3906
C C E E
TO-92 SOT-23 SOT-223 B Mark:2A EBC C
B Ordering Information
Part Number Marking Package Packing Method Pack Quantity 2N3906BU 2N3906 TO-92 3L Bulk 10000 2N3906TA 2N3906 TO-92 3L Ammo 2000 2N3906TAR 2N3906 TO-92 3L Ammo 2000 2N3906TF 2N3906 TO-92 3L Tape and Reel 2000 2N3906TFR 2N3906 TO-92 3L Tape and Reel 2000 MMBT3906 2A SOT-23 3L Tape and Reel 3000 PZT3906 3906 SOT-223 4L Tape and Reel 2500 © 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2 www.fairchildsemi.com
1 2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier April 2014 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit VCEO Collector-Emitter Voltage -40 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V -200 mA -55 to +150 °C IC
TJ, TSTG Parameter Collector Current -Continuous
Operating and Storage Junction Temperature Range Note:
1. These ratings are based on a maximum junction temperature of 150°C.
These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed
or low-duty cycle operations. Thermal Characteristics
Values are at TA = 25°C unless otherwise noted. Symbol
PD Maximum Parameter
Total Device Dissipation Unit 2N3906(3) MMBT3906(2) PZT3906(3) 625 350 1,000 mW 2.8 8.0 mW/°C Derate Above 25°C 5.0 RθJC Thermal Resistance, Junction to Case 83.3 RθJA Thermal Resistance, Junction to Ambient 200 °C/W
357 125 °C/W Notes:
2. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
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制造商分类
- Discretes > Bipolar Transistors > Small Signal BJTs