Datasheet New Jersey Semiconductor 1N34 — 数据表

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TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 1N34
Gold Bonded Germanium Diode FEATURES Low forward voltage drop-low power consumption Thirty years of proven reliability-one million hours mean time between failures (MTBF) Very low noise level Metallurgically bonded ABSOLUTE MAXIMUM RATINGS Peak Inverse Voltage Peak Forward Current (at 25 °C, unless otherwise specified) 60 Volts Operating Temperature Range Average Power Dissipation 500 mA -65 °C to 85 °C 80 mW ELECTRICAL CHARACTERISTICS Symbol Peak Inverse Voltage Reverse Current Reverse Current Forward Voltage Conditions Min 60 Max 15 Unit T°C P1V Ir Ir Vf 1 10 50 8.5 mA V V mA V fiA 800 1 uA V 25 °C 25 °C °C 25 °C MECHANICAL
.021" DIA
= ,107' DIA .095" , * MIN -300" MAX NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors …