Datasheet Texas Instruments LF353MX/NOPB — 数据表

制造商Texas Instruments
系列LF353-N
零件号LF353MX/NOPB
Datasheet Texas Instruments LF353MX/NOPB

宽带双路JFET输入运算放大器8-SOIC 0至70

数据表

LF353 Wide Bandwidth Dual JFET Input Operational Amplifier datasheet
PDF, 1.0 Mb, 修订版: F, 档案已发布: Mar 25, 2013
从文件中提取

价格

状态

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityYes

打包

Pin88
Package TypeDD
Industry STD TermSOICSOIC
JEDEC CodeR-PDSO-GR-PDSO-G
Package QTY25002500
CarrierLARGE T&RLARGE T&R
Device MarkingLF353M
Width (mm)3.913.91
Length (mm)4.94.9
Thickness (mm)1.581.58
Pitch (mm)1.271.27
Max Height (mm)1.751.75
Mechanical Data下载下载

参数化

Additional FeaturesN/A
ArchitectureFET
CMRR(Min)70 dB
CMRR(Typ)100 dB
GBW(Typ)4 MHz
Input Bias Current(Max)200 pA
Iq per channel(Max)3.25 mA
Iq per channel(Typ)1.8 mA
Number of Channels2
Offset Drift(Typ)10 uV/C
Operating Temperature Range0 to 70 C
Output Current(Typ)20 mA
Package GroupSOIC
Package Size: mm2:W x L8SOIC: 29 mm2: 6 x 4.9(SOIC) PKG
Rail-to-RailIn to V+
RatingCatalog
Slew Rate(Typ)13 V/us
Total Supply Voltage(Max)36 +5V=5, +/-5V=10
Total Supply Voltage(Min)10 +5V=5, +/-5V=10
Vn at 1kHz(Typ)16 nV/rtHz
Vos (Offset Voltage @ 25C)(Max)10 mV

生态计划

RoHSCompliant

应用须知

  • AN-447 Protection Schemes for BI-FET Amplifiers and Switches
    PDF, 80 Kb, 档案已发布: May 2, 2004
    Application Note 447 Protection Schemes for BI-FET Amplifiers and Switches
  • AN-256 Circuitry for Inexpensive Relative Humidity Measurement (Rev. B)
    PDF, 262 Kb, 修订版: B, 档案已发布: May 6, 2013
    Of all common environmental parameters humidity is perhaps the least understood and most difficult tomeasure. The most common electronic humidity detection methods albeit highly accurate are not obviousand tend to be expensive and complex (See Box). Accurate humidity measurement is vital to a number ofdiverse areas including food processing paper and lumber production pollution monitor
  • AN-263 Sine Wave Generation Techniques (Rev. C)
    PDF, 747 Kb, 修订版: C, 档案已发布: Apr 22, 2013
    This application note describes the sine wave generation techniques to control frequency amplitude anddistortion levels.
  • AN-262 Applying Dual and Quad FET Op Amps (Rev. B)
    PDF, 1.1 Mb, 修订版: B, 档案已发布: May 6, 2013
    The availability of dual and quad packaged FET op amps offers the designer all the traditional capabilitiesof FET op amps including low bias current and speed and some additional advantages. The cost-peramplifieris lower because of reduced package costs. This means that more amplifiers are available toimplement a function at a given cost making design easier. At the same time the availab
  • Get More Power Out of Dual or Quad Op-Amps
    PDF, 91 Kb, 档案已发布: Oct 2, 2002

模型线

系列: LF353-N (5)

制造商分类

  • Semiconductors > Amplifiers > Operational Amplifiers (Op Amps) > General-Purpose Op Amps