Datasheet Texas Instruments CSD19537Q3T — 数据表
| 制造商 | Texas Instruments |
| 系列 | CSD19537Q3 |
| 零件号 | CSD19537Q3T |
100V N沟道NexFET功率MOSFET 8-VSON-CLIP -55至150
数据表
CSD19537Q3 100-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 504 Kb, 修订版: A, 档案已发布: May 31, 2016
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价格
状态
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No |
打包
| Pin | 8 |
| Package Type | DQG |
| Package QTY | 250 |
| Carrier | SMALL T&R |
| Device Marking | CSD19537 |
| Width (mm) | 3.3 |
| Length (mm) | 3.3 |
| Thickness (mm) | 1 |
| Mechanical Data | 下载 |
参数化
| ID, Silicon limited at Tc=25degC | 53 A |
| IDM, Max Pulsed Drain Current(Max) | 219 A |
| Package | SON3x3 mm |
| QG Typ | 16 nC |
| QGD Typ | 2.9 nC |
| Rds(on) Max at VGS=10V | 14.5 mOhms |
| VDS | 100 V |
| VGS | 20 V |
| VGSTH Typ | 3.0 V |
生态计划
| RoHS | Compliant |
| Pb Free | Yes |
应用须知
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, 档案已发布: Nov 16, 2011
模型线
系列: CSD19537Q3 (2)
- CSD19537Q3 CSD19537Q3T
制造商分类
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor