Datasheet Texas Instruments CSD85301Q2T — 数据表

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SLPS521 – DECEMBER 2014 CSD85301Q2 20 V Dual N-Channel NexFET™ Power MOSFETs
1 Features 1 . Low On-Resistance
Dual Independent MOSFETs
Space Saving SON 2 Г— 2 mm Plastic Package
Optimized for 5 V Gate Driver
Avalanche Rated
Pb and Halogen Free
RoHS Compliant 2 Applications UNIT Drain-to-Source Voltage 20 V Qg Gate Charge Total (4.5 V) 4.2 nC Qgd Gate Charge Gate to Drain RDS(on) 1.0 Drain-to-Source On Resistance nC VGS = 1.8 V 65 mΩ VGS = 2.5 V 33 mΩ VGS = 3.8 V 25 mΩ VGS = 4.5 V 23 mΩ Threshold Voltage 0.9 V .
Ordering Information(1)
Device Media Qty Package Ship CSD85301Q2 7-Inch Reel 3000 CSD85301Q2T 7-Inch Reel 250 SON 2 x 2 mm
Plastic Package Tape and
Reel (1) For all available packages, see the orderable addendum at
the end of the data sheet. 3 Description
The CSD85301Q2 is a 20 V, 23 mΩ N-Channel
device with dual independent MOSFETs in a SON 2 x
2 mm plastic package. The two FETs were designed
to be used in a half bridge configuration for …