Datasheet Texas Instruments CSD19538Q3AT — 数据表
| 制造商 | Texas Instruments |
| 系列 | CSD19538Q3A |
| 零件号 | CSD19538Q3AT |
100V N沟道NexFET功率MOSFET 8-VSONP -55至150
数据表
CSD19538Q3A 100-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 352 Kb, 修订版: A, 档案已发布: Mar 20, 2017
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价格
状态
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No |
打包
| Pin | 8 |
| Package Type | DNH |
| Package QTY | 250 |
| Carrier | SMALL T&R |
| Device Marking | 19538 |
| Width (mm) | 3.3 |
| Length (mm) | 3.3 |
| Thickness (mm) | .8 |
| Mechanical Data | 下载 |
参数化
| Configuration | Single |
| ID, Silicon limited at Tc=25degC | 13.7 A |
| IDM, Max Pulsed Drain Current(Max) | 36 A |
| Package | SON3x3 mm |
| QG Typ | 4.3 nC |
| QGD Typ | 0.8 nC |
| Rds(on) Max at VGS=10V | 61 mOhms |
| VDS | 100 V |
| VGS | 20 V |
| VGSTH Typ | 3.2 V |
生态计划
| RoHS | Compliant |
应用须知
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, 档案已发布: Nov 16, 2011
模型线
系列: CSD19538Q3A (2)
- CSD19538Q3A CSD19538Q3AT
制造商分类
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor