Datasheet Texas Instruments LF353M — 数据表
| 制造商 | Texas Instruments |
| 系列 | LF353-N |
| 零件号 | LF353M |
宽带双路JFET输入运算放大器8-SOIC 0至70
数据表
LF353 Wide Bandwidth Dual JFET Input Operational Amplifier datasheet
PDF, 1.0 Mb, 修订版: F, 档案已发布: Mar 25, 2013
从文件中提取
价格
状态
| Lifecycle Status | NRND (Not recommended for new designs) |
| Manufacture's Sample Availability | No |
打包
| Pin | 8 | 8 |
| Package Type | D | D |
| Industry STD Term | SOIC | SOIC |
| JEDEC Code | R-PDSO-G | R-PDSO-G |
| Package QTY | 95 | 95 |
| Carrier | TUBE | TUBE |
| Device Marking | LF353 | M |
| Width (mm) | 3.91 | 3.91 |
| Length (mm) | 4.9 | 4.9 |
| Thickness (mm) | 1.58 | 1.58 |
| Pitch (mm) | 1.27 | 1.27 |
| Max Height (mm) | 1.75 | 1.75 |
| Mechanical Data | 下载 | 下载 |
替代品
| Replacement | LF353M/NOPB |
| Replacement Code | S |
参数化
| Additional Features | N/A |
| Architecture | FET |
| CMRR(Min) | 70 dB |
| CMRR(Typ) | 100 dB |
| GBW(Typ) | 4 MHz |
| Input Bias Current(Max) | 200 pA |
| Iq per channel(Max) | 3.25 mA |
| Iq per channel(Typ) | 1.8 mA |
| Number of Channels | 2 |
| Offset Drift(Typ) | 10 uV/C |
| Operating Temperature Range | 0 to 70 C |
| Output Current(Typ) | 20 mA |
| Package Group | SOIC |
| Package Size: mm2:W x L | 8SOIC: 29 mm2: 6 x 4.9(SOIC) PKG |
| Rail-to-Rail | In to V+ |
| Rating | Catalog |
| Slew Rate(Typ) | 13 V/us |
| Total Supply Voltage(Max) | 36 +5V=5, +/-5V=10 |
| Total Supply Voltage(Min) | 10 +5V=5, +/-5V=10 |
| Vn at 1kHz(Typ) | 16 nV/rtHz |
| Vos (Offset Voltage @ 25C)(Max) | 10 mV |
生态计划
| RoHS | See ti.com |
应用须知
- AN-447 Protection Schemes for BI-FET Amplifiers and SwitchesPDF, 80 Kb, 档案已发布: May 2, 2004
Application Note 447 Protection Schemes for BI-FET Amplifiers and Switches - AN-262 Applying Dual and Quad FET Op Amps (Rev. B)PDF, 1.1 Mb, 修订版: B, 档案已发布: May 6, 2013
The availability of dual and quad packaged FET op amps offers the designer all the traditional capabilitiesof FET op amps including low bias current and speed and some additional advantages. The cost-peramplifieris lower because of reduced package costs. This means that more amplifiers are available toimplement a function at a given cost making design easier. At the same time the availab - AN-263 Sine Wave Generation Techniques (Rev. C)PDF, 747 Kb, 修订版: C, 档案已发布: Apr 22, 2013
This application note describes the sine wave generation techniques to control frequency amplitude anddistortion levels. - AN-256 Circuitry for Inexpensive Relative Humidity Measurement (Rev. B)PDF, 262 Kb, 修订版: B, 档案已发布: May 6, 2013
Of all common environmental parameters humidity is perhaps the least understood and most difficult tomeasure. The most common electronic humidity detection methods albeit highly accurate are not obviousand tend to be expensive and complex (See Box). Accurate humidity measurement is vital to a number ofdiverse areas including food processing paper and lumber production pollution monitor - Get More Power Out of Dual or Quad Op-AmpsPDF, 91 Kb, 档案已发布: Oct 2, 2002
模型线
系列: LF353-N (5)
制造商分类
- Semiconductors > Amplifiers > Operational Amplifiers (Op Amps) > General-Purpose Op Amps