Datasheet Texas Instruments CSD87312Q3E — 数据表
| 制造商 | Texas Instruments |
| 系列 | CSD87312Q3E |
| 零件号 | CSD87312Q3E |
双30V N沟道NexFET功率MOSFET 8-VSON -55至150
数据表
Dual 30-V N-Channel NexFet Power MOSFET, CSD87312Q3E datasheet
PDF, 783 Kb, 档案已发布: Nov 19, 2011
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价格
状态
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
打包
| Pin | 8 |
| Package Type | DPB |
| Package QTY | 2500 |
| Carrier | LARGE T&R |
| Device Marking | 87312E |
| Width (mm) | 3.3 |
| Length (mm) | 3.3 |
| Thickness (mm) | .9 |
| Mechanical Data | 下载 |
参数化
| Configuration | Dual Common Source |
| ID, Silicon limited at Tc=25degC | 27 A |
| IDM, Max Pulsed Drain Current(Max) | 45 A |
| Package | SON3x3 mm |
| QG Typ | 6.3 nC |
| QGD Typ | 0.7 nC |
| RDS(on) Typ at VGS=4.5V | 31 mOhm |
| Rds(on) Max at VGS=4.5V | 38 mOhms |
| VDS | 30 V |
| VGS | 10 V |
| VGSTH Typ | 1 V |
生态计划
| RoHS | Compliant |
| Pb Free | Yes |
模型线
系列: CSD87312Q3E (2)
- CSD87312Q3E CSD87312Q3E-ASY
制造商分类
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor