Datasheet Texas Instruments CSD19533Q5AT — 数据表

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SLPS486A – DECEMBER 2013 – REVISED MAY 2014 CSD19533Q5A 100 V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb-Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package TA = 25°C TYPICAL VALUE Drain-to-Source Voltage 100 V Qg Gate Charge Total (10 V) 27 nC Qgd Gate Charge Gate to Drain 4.9 RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage nC VGS = 6 V 8.7 mΩ VGS = 10 V 7.8 mΩ 2.8 V .
Ordering Information(1) 2 Applications UNIT VDS Primary Side Telecom
Secondary Side Synchronous Rectifier
Motor Control Device Media Qty Package Ship CSD19533Q5A 13-Inch Reel 2500 CSD19533Q5AT 7-Inch Reel 250 SON 5 x 6 mm
Plastic Package Tape and
Reel 3 Description (1) For all available packages, see the orderable addendum at
the end of the data sheet. This 100 V, 7.8 mО©, SON 5 mm Г— 6 mm NexFETв„ў
power MOSFET is designed to minimize losses in
power conversion applications. TA = 25В°C Top View
S 8 1 D Absolute Maximum Ratings …