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Documents CSD85302L
SLPS561 – NOVEMBER 2015 CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET
1 Features 1 Text added for spacing Common Drain Configuration
Low On-Resistance
Small Footprint of 1.35 mm Г— 1.35 mm
Pb Free and Halogen Free
RoHS Compliant
ESD HBM Protection >2.5 kV Product Summary
TA = 25В°C 20 V Qg Gate Charge Total (4.5 V) 6 nC Qgd Gate Charge Gate-to-Drain RS1S2(on) 1.4 nC VGS(th) This 20 V, 18.7 mО©, 1.35 mm Г— 1.35 mm LGA Dual
NexFETв„ў power MOSFET is designed to minimize
resistance in the smallest footprint. Its small footprint
and common drain configuration make the device
ideal for battery-powered applications in small
handheld devices. 20 mΩ 18.7 Threshold Voltage mΩ 0.9 V DEVICE QTY MEDIA PACKAGE SHIP CSD85302L 3000 CSD85302LT 250 7-Inch
Reel 1.35 Г— 1.35 mm Land Grid
Array (LGA) Package Tape and
Reel (1) For all available packages, see the orderable addendum at
the end of the data sheet. Absolute Maximum Ratings …
