Datasheet Texas Instruments CSD19502Q5BT — 数据表

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SLPS413B – DECEMBER 2013 – REVISED MAY 2017 CSD19502Q5B 80 V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Logic Level
Pb-Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package TA = 25°C UNIT Drain-to-Source Voltage 80 V Qg Gate Charge Total (10 V) 48 nC Qgd Gate Charge Gate to Drain 8.6 RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage nC VGS = 6 V 3.8 mΩ VGS = 10 V 3.4 mΩ 2.7 V .
Ordering Information(1) 2 Applications TYPICAL VALUE VDS Secondary Side Synchronous Rectifier
Motor Control Device Media Qty Package Ship CSD19502Q5B 13-Inch Reel 2500 CSD19502Q5BT 13-Inch Reel 250 SON 5 x 6 mm
Plastic Package Tape and
Reel 3 Description (1) For all available packages, see the orderable addendum at
the end of the data sheet. This 3.4 mО©, 80 V, SON 5 mm Г— 6 mm NexFETв„ў
power MOSFET is designed to minimize losses in
power conversion applications. TA = 25В°C Top View
S 8 1 Absolute Maximum Ratings …