Datasheet Texas Instruments CSD16570Q5BT — 数据表

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SLPS496A – JULY 2014 – REVISED MAY 2017 CSD16570Q5B 25-V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Extremely Low Resistance
Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm Г— 6-mm Plastic Package TA = 25В°C 25 V Qg Gate Charge Total (4.5 V) 95 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage This 25 V, 0.49 mО©, SON 5 Г— 6 mm NexFETв„ў power
MOSFET is designed to minimize resistance for
ORing and hot swap applications and is not designed
for switching applications.
Top Icon VGS = 10 V 0.49 mΩ 1.5 V Device Qty Media Package Ship 2500 13-Inch Reel CSD16570Q5BT 250 7-Inch Reel SON 5 × 6 mm
Plastic Package Tape and
Reel Absolute Maximum Ratings
TA = 25В°C VALUE UNIT VDS Drain-to-Source Voltage 25 V VGS Gate-to-Source Voltage В±20 V Continuous Drain Current (Package limited) 100 Continuous Drain Current (Silicon limited),
TC = 25В°C 456 1 8 D ID S 2 7 D IDM 4 mΩ CSD16570Q5B S G nC …