Datasheet Texas Instruments TLV2316IDR — 数据表
| 制造商 | Texas Instruments |
| 系列 | TLV2316 |
| 零件号 | TLV2316IDR |
适用于成本敏感型系统的10MHz，低噪声，RRIO，CMOS运算放大器8-SOIC -40至125
数据表
TLVx316 10-MHz, Rail-to-Rail Input/Output, Low-Voltage, 1.8-V CMOS Operational Amplifiers datasheet
PDF, 1.8 Mb, 修订版: A, 档案已发布: Sep 23, 2016
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价格
状态
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
打包
| Pin | 8 |
| Package Type | D |
| Industry STD Term | SOIC |
| JEDEC Code | R-PDSO-G |
| Package QTY | 2500 |
| Carrier | LARGE T&R |
| Device Marking | V2316 |
| Width (mm) | 3.91 |
| Length (mm) | 4.9 |
| Thickness (mm) | 1.58 |
| Pitch (mm) | 1.27 |
| Max Height (mm) | 1.75 |
| Mechanical Data | 下载 |
参数化
| Additional Features | Cost Optimized,EMI Hardened |
| Architecture | CMOS |
| CMRR(Min) | 72 dB |
| CMRR(Typ) | 90 dB |
| GBW(Typ) | 10 MHz |
| Iq per channel(Max) | 575 mA |
| Iq per channel(Typ) | 0.4 mA |
| Number of Channels | 2 |
| Offset Drift(Typ) | 2 uV/C |
| Operating Temperature Range | -40 to 125 C |
| Output Current(Typ) | 50 mA |
| Package Group | SOIC |
| Package Size: mm2:W x L | 8SOIC: 29 mm2: 6 x 4.9(SOIC) PKG |
| Rail-to-Rail | In,Out |
| Rating | Catalog |
| Slew Rate(Typ) | 6 V/us |
| Total Supply Voltage(Max) | 5.5 +5V=5, +/-5V=10 |
| Total Supply Voltage(Min) | 1.8 +5V=5, +/-5V=10 |
| Vn at 1kHz(Typ) | 12 nV/rtHz |
| Vos (Offset Voltage @ 25C)(Max) | 3 mV |
生态计划
| RoHS | Compliant |
模型线
系列: TLV2316 (3)
- TLV2316IDGKR TLV2316IDGKT TLV2316IDR
制造商分类
- Semiconductors > Amplifiers > Operational Amplifiers (Op Amps) > General-Purpose Op Amps