Datasheet Texas Instruments CSD19531Q5AT — 数据表
| 制造商 | Texas Instruments |
| 系列 | CSD19531Q5A |
| 零件号 | CSD19531Q5AT |
100V，5.3mOhm，SON5x6 NexFET™功率MOSFET 8-VSONP -55至150
数据表
CSD19531Q5A 100 V N-Channel NexFET Power MOSFETs datasheet
PDF, 737 Kb, 修订版: B, 档案已发布: May 19, 2014
从文件中提取
价格
状态
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No |
打包
| Pin | 8 |
| Package Type | DQJ |
| Package QTY | 250 |
| Carrier | SMALL T&R |
| Device Marking | CSD19531 |
| Width (mm) | 6 |
| Length (mm) | 4.9 |
| Thickness (mm) | 1 |
| Mechanical Data | 下载 |
参数化
| Configuration | Single |
| ID, Silicon limited at Tc=25degC | 110 A |
| IDM, Max Pulsed Drain Current(Max) | 337 A |
| Package | SON5x6 mm |
| QG Typ | 37 nC |
| QGD Typ | 6.6 nC |
| Rds(on) Max at VGS=10V | 6.4 mOhms |
| VDS | 100 V |
| VGS | 20 V |
| VGSTH Typ | 2.7 V |
生态计划
| RoHS | Compliant |
| Pb Free | Yes |
设计套件和评估模块
- Evaluation Modules & Boards: UCC24636EVM
UCC24636 Synchronous Rectifier Daughter Board/Evaluation Module
Lifecycle Status: Active (Recommended for new designs)
应用须知
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, 档案已发布: Nov 16, 2011
模型线
系列: CSD19531Q5A (2)
- CSD19531Q5A CSD19531Q5AT
制造商分类
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor