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Documents CSD22202W15
SLPS431B – JUNE 2013 – REVISED DECEMBER 2014 CSD22202W15 P-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Low Resistance
Small Footprint 1.5 mm Г— 1.5 mm
Pb Free
Gate ESD Protection
RoHS Compliant
Halogen Free
Gate-Source Voltage Clamp TA = 25°C TYPICAL VALUE Drain-to-Source Voltage –8 V Qg Gate Charge Total (–4.5 V) 6.5 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage Battery Management
Battery Protection
Load Switch Applications The device is designed to deliver the lowest on
resistance and gate charge in the smallest outline
possible with excellent thermal characteristics in an
ultra-low profile. Low on resistance coupled with the
small footprint and low profile make the device ideal
for battery operated space constrained applications.
Top View and Circuit Configuration Source
S S S S D mΩ VGS = –4.5 V 10.2 mΩ –0.8 V Device Qty Media Package Ship CSD22202W15 3000 7-Inch Reel CSD22202W15T 250 7-Inch Reel 1.5 mm Г— 1.5 mm …
