Datasheet Texas Instruments CSD19538Q2T — 数据表

制造商Texas Instruments
系列CSD19538Q2
零件号CSD19538Q2T
Datasheet Texas Instruments CSD19538Q2T

100V,49mOhm SON2x2 NexFET功率MOSFET 6-WSON -55至150

数据表

CSD19538Q2 100-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 394 Kb, 修订版: A, 档案已发布: Jan 20, 2017
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价格

状态

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityNo

打包

Pin6
Package TypeDQK
Package QTY250
CarrierSMALL T&R
Device Marking1958
Width (mm)2
Length (mm)2
Thickness (mm).75
Mechanical Data下载

参数化

ConfigurationSingle
ID, Silicon limited at Tc=25degC13.1 A
IDM, Max Pulsed Drain Current(Max)34.4 A
PackageSON2x2 mm
QG Typ4.3 nC
QGD Typ0.8 nC
Rds(on) Max at VGS=10V59 mOhms
VDS100 V
VGS20 V
VGSTH Typ3.2 V

生态计划

RoHSCompliant

模型线

系列: CSD19538Q2 (2)

制造商分类

  • Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor