Datasheet Texas Instruments TLE2161IDG4 — 数据表
| 制造商 | Texas Instruments |
| 系列 | TLE2161 |
| 零件号 | TLE2161IDG4 |
JFET输入高输出驱动低功率失补偿运算放大器8-SOIC
数据表
Excalibur JFET-Input High-Output-Drive Micro Power Operational Amplifiers datasheet
PDF, 1.0 Mb, 修订版: D, 档案已发布: May 1, 1996
从文件中提取
价格
状态
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No |
打包
| Pin | 8 |
| Package Type | D |
| Industry STD Term | SOIC |
| JEDEC Code | R-PDSO-G |
| Package QTY | 75 |
| Carrier | TUBE |
| Device Marking | 2161I |
| Width (mm) | 3.91 |
| Length (mm) | 4.9 |
| Thickness (mm) | 1.58 |
| Pitch (mm) | 1.27 |
| Max Height (mm) | 1.75 |
| Mechanical Data | 下载 |
参数化
| Additional Features | Decompensated |
| Architecture | FET |
| CMRR(Min) | 72 dB |
| CMRR(Typ) | 90 dB |
| GBW(Typ) | 6.4 MHz |
| Input Bias Current(Max) | 60 pA |
| Iq per channel(Max) | 0.35 mA |
| Iq per channel(Typ) | 0.29 mA |
| Number of Channels | 1 |
| Offset Drift(Typ) | 6 uV/C |
| Operating Temperature Range | 0 to 70 C |
| Output Current(Typ) | 50 mA |
| Package Group | SOIC |
| Package Size: mm2:W x L | 8SOIC: 29 mm2: 6 x 4.9(SOIC) PKG |
| Rail-to-Rail | In to V+ |
| Rating | Catalog |
| Slew Rate(Typ) | 10 V/us |
| Total Supply Voltage(Max) | 36 +5V=5, +/-5V=10 |
| Total Supply Voltage(Min) | 7 +5V=5, +/-5V=10 |
| Vn at 1kHz(Typ) | 40 nV/rtHz |
| Vos (Offset Voltage @ 25C)(Max) | 3 mV |
生态计划
| RoHS | Compliant |
应用须知
- TLE2161 EMI Immunity PerformancePDF, 90 Kb, 档案已发布: Dec 31, 2013
模型线
系列: TLE2161 (8)
- TLE2161CD TLE2161CDG4 TLE2161CP TLE2161ID TLE2161IDG4 TLE2161IDR TLE2161IDRG4 TLE2161IP
制造商分类
- Semiconductors > Amplifiers > Operational Amplifiers (Op Amps) > Precision Op Amps