Datasheet Texas Instruments CSD87312Q3E-ASY — 数据表
制造商 | Texas Instruments |
系列 | CSD87312Q3E |
零件号 | CSD87312Q3E-ASY |
双30V N沟道NexFET功率MOSFET 8-VSON -55至150
数据表
Dual 30-V N-Channel NexFet Power MOSFET, CSD87312Q3E datasheet
PDF, 783 Kb, 档案已发布: Nov 19, 2011
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价格
状态
Lifecycle Status | Preview (Device has been announced but is not in production. Samples may or may not be available) |
Manufacture's Sample Availability | No |
打包
Pin | 8 |
Package Type | DPB |
Width (mm) | 3.3 |
Length (mm) | 3.3 |
Thickness (mm) | .9 |
Mechanical Data | 下载 |
参数化
Approx. Price (US$) | 0.35 | 1ku |
Configuration | Dual Common Source |
IDM, Max Pulsed Drain Current(Max)(A) | 45 |
Package (mm) | SON3x3 |
QG Typ(nC) | 6.3 |
QGD Typ(nC) | 0.7 |
RDS(on) Typ at VGS=4.5V(mOhm) | 31 |
Rds(on) Max at VGS=4.5V(mOhms) | 38 |
VDS(V) | 30 |
VGS(V) | 10 |
VGSTH Typ(V) | 1 |
生态计划
RoHS | Not Compliant |
Pb Free | No |
模型线
系列: CSD87312Q3E (2)
- CSD87312Q3E CSD87312Q3E-ASY
制造商分类
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor
其他名称:
CSD87312Q3EASY, CSD87312Q3E ASY